2SC4226 Datasheet, PDF (6/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
S-PARAMETER
VCE = 3 V, IC = 5 mA, ZO = 50Ω
Freque.
S₁₁
MHz
MAG
ANG
100
0.819
–38.9
200
0.701
–73.4
300
0.608
–102.3
400
0.549
–123.6
500
0.511
–139.6
600
0.494
–151.0
700
0.481
–160.8
800
0.475
–168.6
900
0.472
–175.7
1000
0.471
178.2
1100
0.473
172.8
1200
0.474
167.6
1300
0.474
162.9
1400
0.477
158.4
1500
0.481
154.4
1600
0.484
150.3
1700
0.489
146.5
1800
0.490
142.9
1900
0.495
139.3
2000
0.501
136.0
S₂₁
MAG
ANG
8.934
148.0
8.007
127.6
6.898
112.6
5.819
101.8
4.970
93.5
4.255
86.9
3.750
81.4
3.328
76.3
3.004
72.0
2.734
67.7
2.522
64.0
2.355
60.2
2.176
56.7
2.038
53.2
1.921
49.8
1.818
46.7
1.726
43.9
1.647
40.6
1.578
37.6
1.505
35.0
isc RF Product Specification
2SC4226
S₁₂
MAG
ANG
0.038
65.8
0.060
53.1
0.072
47.6
0.079
45.2
0.086
45.7
0.093
46.5
0.099
47.2
0.107
48.9
0.113
49.7
0.122
50.9
0.130
51.6
0.139
52.3
0.148
53.1
0.158
53.3
0.168
53.7
0.177
53.3
0.190
53.3
0.200
53.0
0.212
52.7
0.223
52.0
S₂₂
MAG
ANG
0.868
–23.6
0.687
–36.7
0.560
–42.4
0.483
–45.4
0.434
–47.2
0.402
–48.6
0.379
–49.9
0.361
–51.5
0.350
–53.4
0.340
–55.4
0.332
–57.3
0.328
–59.7
0.322
–62.3
0.319
–65.2
0.315
–68.2
0.313
–70.9
0.312
–73.9
0.312
–77.2
0.309
–80.8
0.309
–84.0
isc website：www.iscsemi.cn
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