2SC4226 Datasheet, PDF (5/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
S-PARAMETER
VCE = 3 V, IC = 7 mA, ZO = 50Ω
Freque.
S₁₁
MHz
MAG
ANG
100
0.750
–45.7
200
0.618
–84.9
300
0.528
–114.5
400
0.483
–134.3
500
0.459
–148.5
600
0.447
–158.8
700
0.441
–167.4
800
0.439
–174.4
900
0.437
179.2
1000
0.437
173.7
1100
0.440
168.6
1200
0.443
163.9
1300
0.444
159.6
1400
0.449
155.5
1500
0.450
151.6
1600
0.455
147.9
1700
0.459
144.3
1800
0.462
140.9
1900
0.466
137.5
2000
0.470
134.4
S₂₁
MAG
ANG
11.858
144.0
10.093
122.3
8.219
107.7
6.684
97.9
5.565
90.5
4.737
84.6
4.134
79.7
3.653
75.2
3.283
71.1
2.978
67.2
2.732
63.7
2.533
60.0
2.357
56.6
2.216
53.4
2.077
50.3
1.972
47.4
1.868
44.3
1.789
41.3
1.702
38.4
1.635
36.1
isc RF Product Specification
2SC4226
S₁₂
MAG
ANG
0.035
63.3
0.053
53.2
0.064
50.6
0.073
50.6
0.081
50.7
0.089
52.3
0.098
53.5
0.107
54.2
0.117
54.9
0.126
55.6
0.136
55.8
0.147
55.3
0.158
55.4
0.169
55.3
0.180
54.7
0.192
54.5
0.202
53.9
0.214
53.0
0.226
52.3
0.238
51.5
S₂₂
MAG
ANG
0.816
–28.5
0.609
–41.8
0.481
–46.7
0.411
–49.1
0.365
–50.5
0.337
–51.5
0.316
–52.6
0.300
–54.2
0.290
–55.9
0.281
–57.9
0.275
–59.6
0.270
–62.3
0.267
–64.7
0.264
–67.5
0.259
–70.6
0.258
–73.3
0.256
–76.3
0.255
–79.6
0.253
–83.0
0.253
–86.4
isc website：www.iscsemi.cn
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