IRF7343QPBF Datasheet, PDF (8/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7343QPbF
P-Channel
1200
960
720
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
480
240
0
1
C_oss
C_rss
10
100
-^{-VDS , Drain-to-Source Voltage (V)}
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -3.1A
16
V_DS =-48V
V_DS =-30V
V_DS =-12V
12
8
4
0
0
10
20
30
40
Q_G , Total Gate Charge (nC)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
0.1
0.0001
0.001
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.01
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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