IRF7343QPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7343QPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 55 — —
P-Ch -55 — —
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
— 0.059 —
— 0.054 —
V/°C
Reference to 25°C, I_D = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
— 0.043 0.050
— 0.056 0.065
— 0.095 0.105
— 0.150 0.170
Ω
V_GS = 10V, I_D = 4.7A „
VGS = 4.5V, ID = 3.8A „
V_GS = -10V, I_D = -3.4A „
VGS = -4.5V, ID = -2.7A „
N-Ch 1.0 — —
P-Ch -1.0 — —
V
VDS = VGS, ID = 250µA
V_DS = V_GS, I_D = -250µA
N-Ch 7.9 — —
P-Ch 3.3 — —
S
VDS = 10V, ID = 4.5A „
V_DS = -10V, I_D = -3.1A
„
N-Ch — — 2.0
VDS = 55V, VGS = 0V
P-Ch —
N-Ch —
—
—
-2.0
25
µA
VDS = -55V, VGS = 0V
V_DS = 55V, V_GS = 0V, T_J = 55°C
P-Ch — — -25
VDS = -55V, VGS = 0V, TJ = 55°C
N-P –– — ±100 nA V_GS = ±20V
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
24 36
26 38
2.3 3.4
3.0 4.5
7.0 10
8.4 13
nC
N-Channel
I_D = 4.5A, V_DS = 44V, V_GS = 10V
„
P-Channel
I_D = -3.1A, V_DS = -44V, V_GS = -10V
N-Ch — 8.3 12
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
14 22
3.2 4.8
10 15
32 48
43 64
13 20
22 32
ns
N-Channel
V_DD = 28V, I_D = 1.0A, R_G = 6.0Ω,
R_D = 28Ω
„
P-Channel
V_DD = -28V, I_D = -1.0A, R_G = 6.0Ω,
R_D = 28Ω
N-Ch — 740 —
N-Channel
P-Ch — 690 —
V_GS = 0V, V_DS = 25V, ƒ = 1.0MHz
N-Ch — 190 — pF
P-Ch — 210 —
P-Channel
N-Ch — 71 —
V_GS = 0V, V_DS = -25V, ƒ = 1.0MHz
P-Ch — 86 —
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 2.0
I_S
Continuous Source Current (Body Diode)
P-Ch — — -2.0 _A
N-Ch — — 38
I_SM
Pulsed Source Current (Body Diode) 
P-Ch — — -27
V_SD
Diode Forward Voltage
N-Ch — 0.70 1.2
P-Ch — -0.80 -1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
T_J = 25°C, I_S = -2.0A, V_GS = 0V ƒ
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
N-Ch — 60 90 _ns
P-Ch — 54 80
N-Ch — 120 170 _nC
P-Ch — 85 130
N-Channel
T_J = 25°C, I_F =2.0A, di/dt = 100A/µs
P-Channel
„
T_J = 25°C, I_F = -2.0A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel I_SD ≤ 4.7A, di/dt ≤ 220A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel I_SD ≤ -3.4A, di/dt ≤ -150A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
ƒ N-Channel Starting T_J = 25°C, L = 6.5mH R_G = 25Ω, I_AS = 4.7A.
P-Channel Starting T_J = 25°C, L = 20mH R_G = 25Ω, I_AS = -3.4A.
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