IRF7343QPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

100
VGS
TOP 15V
12V
10V
8.0V
46.05V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
N-Channel
IRF7343QPbF
100
VGS
TOP 15V
12V
10V
8.0V
46..50VV
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ= 150 °C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
10
VDS= 25V
20µs PULSE WIDTH
1
3
4
5
6
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
10
T_J = 150° C
T_J = 25°C
1
0.1
0.2
V_GS = 0 V
0.5
0.8
1.1
1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3