20MT120UF Datasheet, PDF (8/13 Pages) International Rectifier – UltraFast NPT IGBT

20MT120UF
I27124 rev. D 02/03
40
RG ₌ 5.0Ω
30
RG ₌₁₀ Ω
20
RG ₌₃₀ Ω
RG ₌₅₀ Ω
10
0
0
5
10 15 20 25 30 35
IF (A)
Fig. 17 - Typical Diode I_RR vs. I_F
T_J = 150°C
40
30
20
10
0
0
10
20
30
40
50
60
RG (Ω)
Fig. 18 - Typical Diode I_RR vs. R_G
T_J = 150°C; I_F = 5.0A
40
35
30
25
20
15
10
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 19- Typical Diode I_RR vs. di_F/dt
V_CC= 400V; V_GE= 15V;
I_CE= 5.0A; T_J = 150°C
8
3.0
2.5
5.0Ω
10 Ω
30A
2.0
1.5
30Ω
20A
50Ω
1.0
10A
0.5
0.0
0
200 400 600 800 1000 1200
diF /dt (A/µs)
Fig. 20 - Typical Diode Q_RR
V_CC= 400V; V_GE= 15V;T_J = 150°C
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