20MT120UF Datasheet, PDF (3/13 Pages) International Rectifier – UltraFast NPT IGBT

20MT120UF
I27124 rev. D 02/03
Diode Characteristics @ T_J = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V_FM
Diode Forward Voltage Drop
E_rec
Reverse Recovery Energy of the Diode
trr
Diode Reverse Recovery Time
Irr
Peak Reverse Recovery Current
2.48
3.28
2.44
3.45
2.21
420
98
33
2.94
3.90
2.84
4.14
2.93
630
150
50
V I_C = 20A
I_C = 40A
I_C = 20A, T_J = 125°C
I_C = 40A, T_J = 125°C
I_C = 20A, T_J = 150°C
µJ V_GE = 15V, R_g = 5Ω, L = 200µH
ns V_CC = 600V, I_C = 20A
A T_J = 125°C
Thermal- Mechanical Specifications
Parameters
T_J
T_STG
R_thJC
R_thCS
T
Wt
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
IGBT
Diode
Case-to-Sink
Module
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (external shortest distance in air
between two terminals)
Creepage (shortest distance along external
surface of the insulating material between 2 terminals)
Mounting Torque
(2)
Weight
Min
- 40
- 40
5.5
8
Typ
0.35
0.40
0.06
3 ± 10%
66
Max
150
125
0.52
0.61
Units
°C
°C/ W
mm
Nm
g (oz)
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
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