 English |
|
|
|
|
|
|
|
| 20MT120UF Datasheet, PDF (1/13 Pages) International Rectifier – UltraFast NPT IGBT | |||
| |||
|
5/
"FULL-BRIDGE" IGBT MTP
I27124 rev. D 02/03
20MT120UF
UltraFast NPT IGBT
Features
⢠UltraFast Non Punch Through (NPT)
Technology
⢠Positive VCE(ON)Temperature Coefficient
⢠10µs Short Circuit Capability
⢠HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery
⢠Low Diode VF
⢠Square RBSOA
⢠Aluminum Nitride DBC
⢠Very Low Stray Inductance Design for
High Speed Operation
⢠UL approved (File E78996)
Benefits
⢠Optimized for Welding, UPS and SMPS
Applications
⢠Rugged with UltraFast Performance
⢠Benchmark Efficiency above 20KHz
⢠Outstanding ZVS and Hard Switching
Operation
⢠Low EMI, requires Less Snubbing
⢠Excellent Current Sharing in Parallel
Operation
⢠Direct Mounting to Heatsink
⢠PCB Solderable Terminals
⢠Very Low Junction-to-Case Thermal
Resistance
Absolute Maximum Ratings
Parameters
VCES
IC
I CM
I LM
IF
I FM
VGE
VISOL
PD
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 106°C
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 106°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT) @ TC = 25°C
@ TC = 100°C
VCES = 1200V
IC = 40A
TC = 25°C
MMTP
Max
1200
40
20
100
100
25
100
± 20
2500
240
96
Units
V
A
V
W
www.irf.com
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese