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20MT120UF Datasheet, PDF (2/13 Pages) International Rectifier – UltraFast NPT IGBT
20MT120UF
I27124 rev. D 02/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
∆V(BR)CES/ Temperature Coeff. of
∆TJ
Breakdown Voltage
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
4
∆VGE(th)/ Temperature Coeff. of
∆TJ
Threshold Voltage
gfe
Transconductance
ICES
Zero Gate Voltage Collector Current (1)
IGES
Gate-to-Emitter Leakage Current
(1) I CES includes also opposite leg overall leakage
+1.3
3.29
4.42
3.87
5.32
3.99
-14
17.5
0.7
2.9
V
V/°C
3.59 V
4.66
4.11
5.70
4.27
6V
mV/°C
S
250 µA
3.0 mA
9.0
±250 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 3mA (25-125°C)
VGE = 15V, IC = 20A
VGE = 15V, IC = 40A
VGE = 15V, IC = 20A TJ = 125°C
VGE = 15V, IC = 40A TJ = 125°C
VGE = 15V, IC = 20A TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 3mA (25-125°C)
VCE = 50V, IC = 20A, PW = 80µs
VGE = 0V, VCE = 1200V, TJ = 25°C
VGE = 0V, VCE = 1200V, TJ = 125°C
VGE = 0V, VCE = 1200V, TJ = 150°C
VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg
Total Gate Charge (turn-on)
Qge
Gate-Emitter Charge (turn-on)
Qgc
Gate-Collector Charge (turn-on)
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
Cies
Coes
Cres
RBSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area
176 264
19 30
89 134
513 770
402 603
915 1373
930
610
1540
1395
915
2310
2530 3790
344 516
78 117
full square
10
nC IC = 20A
VCC = 600V
VGE = 15V
µJ VCC = 600V, IC = 20A
VGE = 15V, Rg = 5Ω, L = 200µH
TJ = 25°C, Energy losses include tail
and diode reverse recovery
µJ VCC = 600V, IC = 20A
VGE = 15V, Rg = 5Ω, L = 200µH
TJ = 125°C, Energy losses include tail
and diode reverse recovery
pF VGE = 0V
VCC = 30V
f = 1.0 MHz
TJ = 150°C, IC = 120A
VCC = 1000V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
µs TJ = 150°C
VCC = 900V, Vp = 1200V
Rg = 5Ω, VGE = +15V to 0V
2
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