IRFB4310ZGPBF Datasheet, PDF (7/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB4310ZGPbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
‚
-

R_G
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
D.U.T. I_SD Waveform
Reverse
-^„ +
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
*
• dv/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
Re-Applied
** ^{+ Voltage}
Body Diode Forward Drop
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Inductor Curent
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** V_GS = 5V for Logic Level Devices
V^*_G^*_S^*=10V
V_DD
I_SD
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET^® Power MOSFETs
V_(BR)DSS
15V
tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 22a. Unclamped Inductive Test Circuit
I_AS
Fig 22b. Unclamped Inductive Waveforms
V_DS
V_GS
R_G
R_D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 23a. Switching Time Test Circuit
L
VCC
DUT
0
210K
S
V_DS
90%
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Fig 24a. Gate Charge Test Circuit
www.irf.com
Qgodr
Qgd Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
7