IRFB4310ZGPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB4310ZGPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
Typ.
–––
0.11
4.8
–––
–––
–––
–––
–––
0.7
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
d ––– V/°C Reference to 25°C, I_D = 5mA
g 6.0 mΩ V_GS = 10V, I_D = 75A
4.0 V V_DS = V_GS, I_D = 150µA
20 µA V_DS = 100V, V_GS = 0V
250
V_DS = 80V, V_GS = 0V, T_J = 125°C
100
-100
–––
nA V_GS = 20V
V_GS = -20V
Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150 ––– –––
Q_g
Total Gate Charge
––– 120 170
Q_gs
Gate-to-Source Charge
––– 29 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 35
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 85 –––
t_d(on)
Turn-On Delay Time
––– 20 –––
t_r
Rise Time
––– 60 –––
t_d(off)
Turn-Off Delay Time
––– 55 –––
t_f
Fall Time
––– 57 –––
C_iss
Input Capacitance
––– 6860 –––
C_oss
Output Capacitance
––– 490 –––
C_rss
Reverse Transfer Capacitance
––– 220 –––
C_oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 570 –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related) ––– 920 –––
S V_DS = 50V, I_D = 75A
nC I_D = 75A
V_DS =50V
g V_GS = 10V
I_D = 75A, V_DS =0V, V_GS = 10V
ns V_DD = 65V
I_D = 75A
R_G = 2.7Ω
g V_GS = 10V
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz, See Fig. 5
i V_GS = 0V, V_DS = 0V to 80V , See Fig. 11
h V_GS = 0V, V_DS = 0V to 80V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 127 A MOSFET symbol
D
showing the
––– ––– 560 A integral reverse
G
p-n junction diode.
S
g ––– ––– 1.3 V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 40
ns T_J = 25°C
V_R = 85V,
––– 49
––– 58
T_J = 125°C
nC T_J = 25°C
g ^{IF = 75A}
di/dt = 100A/µs
––– 89
T_J = 125°C
––– 2.5 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width ≤ 400µs; duty cycle ≤ 2%.
temperature. Bond wire current limit is 120A. Note that current
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as C_oss while V_DS is rising from 0 to 80% V_DSS.
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.047mH
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
above the Eas value and test conditions.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
„ I_SD ≤ 75A, di/dt ≤ 600A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
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