IRFB4310ZGPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFETPower MOSFET

PD - 96189
IRFB4310ZGPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
100V
4.8m:
6.0m:
c 127A
S ^ID (Package Limited) ^120A
D
DS
G
TO-220AB
IRFB4310ZGPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V(Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat Greased Surface
jk Junction-to-Ambient
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Max.
™ 127
90™
120
560
250
1.7
± 20
18
-55 to + 175
300
x x 10lb in (1.1N m)
130
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.6
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
10/15/08