IRFB4310ZGPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB4310ZGPbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
140
LIMITED BY PACKAGE
120
100
80
60
40
20
0
25
50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec _100µsec
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
130
ID = 5mA
120
110
100
90
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
600
ID
500
TOP
11A
19A
BOTTOM 75A
400
300
200
100
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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