IRF7404QPBF Datasheet, PDF (7/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040Ω )

IRF7404QPbF
D.U.T
+
‚
-

R_G
V_GS*
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
ƒ
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
„
-
+
**
• dv/dt controlled by R_G
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
V_DD^*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V
[
] ***
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
V_DD
[]
Ripple ≤ 5%
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
I_SD
[]
Fig 13. For P-Channel HEXFETS
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