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IRF7404QPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040Ω ) | |||
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IRF7404QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20   V VGS = 0V, ID = -250µA
 -0.012  V/°C Reference to 25°C, ID = -1mA
ÂÂÂ ÂÂÂ 0.040
ÂÂÂ ÂÂÂ 0.060
â¦
VGS = -4.5V, ID = -3.2A Â
VGS = -2.7V, ID = -2.7A Â
-0.70 ÂÂÂ ÂÂÂ
6.8 ÂÂÂ ÂÂÂ
V VDS = VGS, ID = -250µA
S VDS = -15V, ID = -3.2A
  -1.0 µA VDS = -16V, VGS = 0V
ÂÂÂ ÂÂÂ -25
VDS = -16V, VGS = 0V, TJ = 125°C
ÂÂÂ ÂÂÂ -100 nA VGS = -12V
ÂÂÂ ÂÂÂ 100
VGS = 12V
ÂÂÂ ÂÂÂ 50
ÂÂÂ ÂÂÂ 5.5
ID = -3.2A
nC VDS = -16V
ÂÂÂ ÂÂÂ 21
ÂÂÂ 14 ÂÂÂ
VGS = -4.5V, See Fig. 6 and 12 Â
VDD = -10V
ÂÂÂ 32 ÂÂÂ ns ID = -3.2A
ÂÂÂ 100 ÂÂÂ
RG = 6.0â¦
ÂÂÂ 65 ÂÂÂ
RD = 3.1â¦, See Fig. 10 Â
D
ÂÂÂ 2.5 ÂÂÂ
nH Between lead tip
and center of die contact G
ÂÂÂ 4.0 ÂÂÂ
S
ÂÂÂ 1500 ÂÂÂ
VGS = 0V
ÂÂÂ 730 ÂÂÂ pF VDS = -15V
ÂÂÂ 340 ÂÂÂ
 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
ÂÂÂ ÂÂÂ -3.1
ÂÂÂ ÂÂÂ -27
ÂÂÂ ÂÂÂ -1.0
ÂÂÂ 69 100
ÂÂÂ 71 110
MOSFET symbol
D
showing the
A integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -2.0A, VGS = 0V Â
ns TJ = 25°C, IF = -3.2A
µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 ISD ⤠-3.2A, di/dt ⤠-65A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
 Surface mounted on FR-4 board, t ⤠10sec.
2
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