IRF7404QPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040Ω )

l Advanced Process Technology
l Ultra Low On-Resistance
l P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free
Description
Specifically designed for Automotive applications, these
HEXFET^® Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
PD - 96127
IRF7404QPbF
HEXFET^® Power MOSFET
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
V_DSS = -20V
R_DS(on) = 0.040Ω
SO-8
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
10 Sec. Pulsed Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient„
Max.
-7.7
-6.7
-5.4
-27
2.5
0.02
± 12
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
50
Units
°C/W
1
08/29/07