IRF7404QPBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040Ω )

IRF7404QPbF
1000
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
1000
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1.5V
0.1
0.01
20µs PULSE WIDTH
T_J = 25°C
A
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
-1.5V
1
0.1
0.01
20µs PULSE WIDTH
T_J = 150°C
A
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
10
V_DS = -15V
20µs PULSE WIDTH
1
A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0
I_D = -5.3A
1.5
1.0
0.5
0.0
V_GS = -4.5V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3