AUIRS2336S_15 Datasheet, PDF (7/37 Pages) International Rectifier – Drives up to six IGBT/MOSFET power devices

AUIRS2336S
Static Electrical Characteristics
Unless otherwise noted, these specifications apply for an operating junction temperature range of -40°C ≤ Tj ≤ 125°C
with bias conditions of (V_CC-COM) = (V_B-V_S) = 15 V. The V_IN and I_IN parameters are referenced to V_SS and are
applicable to all six channels. The V_O and I_O parameters are referenced to respective V_S and COM and are
applicable to the respective output leads HO or LO. The _VCCUV parameters are referenced to V_SS. The _VBSUV
parameters are referenced to V_S.
Symbol
Definition
Min Typ Max Units Test Conditions
V_CCUV+ V_CC supply undervoltage positive going threshold 8
8.9 9.8
V_CCUV-
V_CC supply undervoltage negative going
threshold
7.4 8.2 9
V_CCUVHY V_CC supply undervoltage hysteresis
0.3 0.7 —
V
NA
V_BSUV+ V_BS supply undervoltage positive going threshold 8
8.9 9.8
V_BSUV-
V_BS supply undervoltage negative going
threshold
7.4 8.2 9
V_BSUVHY
I_LK
I_QBS
I_QCC
V_OH
V_OL
I_o+
V_BS supply undervoltage hysteresis
High-side floating well offset supply leakage
Quiescent V_BS supply current
Quiescent V_CC supply current
High level output voltage drop, V_BIAS-V_O
Low level output voltage drop, V_O
Output high short circuit pulsed current
I_o-
V_IH
V_IL
V_IN,CLAMP
I_HIN+
I_HIN-
I_LIN+
I_LIN-
V_RCIN,TH
V_RCIN,HY
I_RCIN
R_ON,RCIN
Output low short circuit pulsed current
Logic “0” input voltage
Logic “1” input voltage
Logic “1” input voltage
Logic “0” input voltage
Input voltage clamp
(HIN, LIN, ITRIP and EN)
Input bias current (HO = High)
Input bias current (HO = Low)
Input bias current (LO = High)
Input bias current (LO = Low)
RCIN positive going threshold
RCIN hysteresis
RCIN input bias current
RCIN low on resistance
0.3 0.7 —
——
50 _µA
V_B = V_S = 600 V
— 70 120
All inputs are in the
—2
3 mA
off state
— 0.90 1.5 V
— 0.40 0.6 V
75 200 —
mA
150 350 —
I_O= 20 mA
V_O=0 V,V_IN=0 V,
PW ≤ 10 µs
V_O=15 V,V_IN=5 V,
PW ≤ 10 µs
2.5 — —
NA
— — 0.8 V
4.8 5.2 5.65
I_IN = 100 µA
— 150 200
V_IN = 0 V
—
—
110
150
150
200
µA
V_IN = 4 V
V_IN = 0 V
— 110 150
V_IN = 4 V
—
—
8
3
—
—
V
NA
——
1
µA V_RCIN = 0 V or 15 V
— 50 100 Ω
I = 1.5 mA
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