AUIRS2336S_15 Datasheet, PDF (28/37 Pages) International Rectifier – Drives up to six IGBT/MOSFET power devices

AUIRS2336S
PCB Layout Tips
Distance between high and low voltage components: It’s strongly recommended to place the components tied to the
floating voltage pins (V_B and V_S) near the respective high voltage portions of the device.
Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high
voltage floating side.
Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure
34). In order to reduce the EM coupling and improve the power switch turn on/off performance, the gate drive loops
must be reduced as much as possible. Moreover, current can be injected inside the gate drive loop via the IGBT
collector-to-gate parasitic capacitance. The parasitic auto-inductance of the gate loop contributes to developing a
voltage across the gate-emitter, thus increasing the possibility of a self turn-on effect.
Figure 34: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor (C_IN) between the V_CC and V_SS pins. This
connection is shown in Figure 35. A ceramic 1 μF ceramic capacitor is suitable for most applications. This
component should be placed as close as possible to the pins in order to reduce parasitic elements.
Vcc
HIN(x3)
LIN(x3)
EN
FAULT
VB (x3)
HO( x3)
VS (x3)
CIN
RCIN
ITRIP
VSS
LO(x3)
COM
www.irf.com
Figure 35: Supply capacitor
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