SI4435DYPBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

Si4435DYPbF
0.10
0.10
0.08
0.08
0.06
0.06
VGS= - 4.5V
Id = -8.0A
0.04
0.04
0.02
0.00
2
4
6
8
10 12 14 16
-VGS, Gate -to -Source Voltage ( V )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.02
0.00
0
VGS = -10V
10
20
30
40
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
6
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