SI4435DYPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
S
l Surface Mount
S
l Available in Tape & Reel
l Lead-Free
S
G
Description
These P-channel HEXFET^® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
PD- 95133
Si4435DYPbF
HEXFET^® Power MOSFET
A
1
8
D
2
7
D
V_DSS = -30V
3
6
D
4
5 _{D RDS(on) = 0.020Ω}
Top View
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
09/30/04