SI4435DYPBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
VGS
TOP -15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
10
1
-2.70V
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Si4435DYPbF
1000
100
VGS
TOP -15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
10
-2.70V
1
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150° C
10
V _DS= -15V
20µs PULSE WIDTH
1
2.0
3.0
4.0
5.0
6.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -8.0A}
1.5
1.0
0.5
V_GS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3