SI4435DYPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

Si4435DYPbF
3500
3000
2500
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1500
1000
500
C_oss
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = -4.6A
16
V_DS =-15V
12
8
4
0
0
10
20
30
40
50
60
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
T_J = 25° C
1
0.1
0.4
V_GS = 0 V
0.6
0.8
1.0
1.2
1.4
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
1ms
10
10ms
T_A = 25°C
T_J = 150° C
Single Pulse
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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