IRFR3708PBF Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET®Power MOSFET

IRFR/U3708PbF
0.025
0.017
0.020
0.015
0.015
0.010
0.005
0
VGS = 4.5V
VGS = 10V
50 100 150 200 250 300
ID , Drain Current ( A )
0.013
0.011
0.009
ID = 31A
0.007
2.0
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 14a&b. Gate Charge Test Circuit
and Waveform
Fig 13. On-Resistance Vs. Gate Voltage
600
ID
TOP
10A
20.7A
480
BOTTOM 24.8A
360
240
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
120
0
25
50
75 100 125 150 175
Starting T_J , Junction Temperature ( ^°C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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