IRFR3708PBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET®Power MOSFET

IRFR/U3708PbF
1000
100
2.7V
VGS
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
100
2.7V
VGS
TOP
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
10
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
T_J = 25° C
100
T_J = 175° C
10
2.0
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ID = 61A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3