IRFR3708PBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET®Power MOSFET

IRFR/U3708PbF
3500
2800
2100
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1400
700
C_oss
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ID = 24.8A}
8
V_DS = 15V
6
4
2
0
0
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 T_J = 175^° C
T_J = 25°C
10
1
0.1
0.2
V_GS = 0 V
0.8
1.4
2.0
2.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100us
10
1ms
10ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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