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IRFR3708PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET®Power MOSFET | |||
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IRFR/U3708PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ
âââ
VGS(th)
Gate Threshold Voltage
0.6
âââ
0.028
8.5
10.0
15.0
âââ
âââ V
âââ V/°C
12.5
14.0 mâ¦
30.0
2.0 V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A Â
VGS = 4.5V, ID = 12A Â
VGS = 2.8V, ID = 7.5A Â
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 24V, VGS = 0V
âââ âââ 100
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ
âââ
200
nA
VGS = 12V
âââ âââ -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
49 âââ âââ
âââ 24 âââ
âââ 6.7 âââ
âââ 5.8 âââ
âââ 14 21
âââ 7.2 âââ
âââ 50 âââ
âââ 17.6 âââ
âââ 3.7 âââ
âââ 2417 âââ
âââ 707 âââ
âââ 52 âââ
S VDS = 15V, ID = 50A
ID = 24.8A
nC VDS = 15V
VGS = 4.5V Â
VGS = 0V, ID = 24.8A, VDS = 15V
VDD = 15V
ns ID = 24.8A
RG = 0.6â¦
VGS = 4.5V Â
VGS = 0V
VDS = 15V
pF Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
213
62
Units
mJ
A
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.88
0.80
41
64
43
70
Max. Units
61Â
A
244
1.3 V
âââ
62 ns
96 nC
65 ns
105 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 31A, VGS = 0V Â
TJ = 125°C, IS = 31A, VGS = 0V Â
TJ = 25°C, IF = 31A, VR=20V
di/dt = 100A/µs Â
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs Â
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