IRFPS40N50LPBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET®Power MOSFET

IRFPS40N50LPbF
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating
Area
2000
1500
ID
TOP
21A
30A
BOTTOM 46A
1000
500
0
25
50
75
100
125
150
Starting T_J , Junction Temperature( ^°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 14a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
6
V_(BR)DSS
tp
I_AS
Fig 14b. Unclamped Inductive Waveforms
Q_G
V_GS
Q_GS
Q_GD
V_G
Charge
Fig 15b. Basic Gate Charge Waveform
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