IRFPS40N50LPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET®Power MOSFET

PD- 95141
IRFPS40N50LPbF
Applications
SMPS MOSFET
HEXFET^® Power MOSFET
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
V_DSS R_DS(on) typ. ^{Trr typ.} I_D
500V 0.087Ω 170ns 46A
• Motor Control applications
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
immunity.
Super-247™
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Max.
46
29
180
540
Units
A
W
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
4.3
±30
34
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Diode Characteristics
300 (1.6mm from case )
Symbol
Parameter
Min. Typ. Max. Units Conditions
I_S
Continuous Source Current
––– ––– 46
MOSFET symbol
(Body Diode)
A showing the
I_SM
Pulsed Source Current
Ãc (Body Diode)
V_SD
Diode Forward Voltage
––– ––– 180
––– ––– 1.5
integral reverse
p-n junction diode.
f V T_J = 25°C, I_S = 46A, V_GS = 0V
t_rr
Reverse Recovery Time
f ^{––– 170 250 ns TJ = 25°C, IF = 46A}
––– 220 330
T_J = 125°C, di/dt = 100A/µs
Q_rr
Reverse Recovery Charge
f ––– 705 1060 nC T_J = 25°C, I_S = 46A, V_GS = 0V
f _{––– 1.3 2.0}
T_J = 125°C, di/dt = 100A/µs
I_RRM
Reverse Recovery Current
––– 9.0 ––– A T_J = 25°C
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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09/14/04