IRFPS40N50LPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET®Power MOSFET

IRFPS40N50LPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V_(BR)DSS
Drain-to-Source Breakdown Voltage 500 ––– ––– V
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C
R_DS(on)
Static Drain-to-Source On-Resistance ––– 0.087 0.100 Ω
V_GS(th)
Gate Threshold Voltage
3.0 ––– 5.0 V
IDSS
Drain-to-Source Leakage Current ––– ––– 50 µA
––– ––– 2.0 mA
I_GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R_G
Internal Gate Resistance
––– 0.90 ––– Ω
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
f V_GS = 10V, I_D = 28A
V_DS = V_GS, I_D = 250µA
V_DS = 500V, V_GS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
V_GS = 30V
V_GS = -30V
f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
21 ––– ––– S
Q_g
Total Gate Charge
––– ––– 380
Qgs
Gate-to-Source Charge
––– ––– 80 nC
Q_gd
Gate-to-Drain ("Miller") Charge
––– ––– 190
t_d(on)
Turn-On Delay Time
––– 27 –––
t_r
Rise Time
––– 170 ––– ns
t_d(off)
Turn-Off Delay Time
––– 50 –––
t_f
Fall Time
––– 69 –––
C_iss
Input Capacitance
––– 8110 –––
Coss
Output Capacitance
––– 960 –––
C_rss
Reverse Transfer Capacitance
––– 130 –––
C_oss
Output Capacitance
––– 11200 ––– pF
C_oss
Output Capacitance
––– 240 –––
C_oss eff.
Effective Output Capacitance
––– 440 –––
C_oss eff. (ER)
Effective Output Capacitance
––– 310 –––
Conditions
V_DS = 50V, I_D = 46A
I_D = 46A
V_DS = 400V
f V_GS = 10V, See Fig. 7 & 15
V_DD = 250V
I_D = 46A
R_G = 0.85Ω
f V_GS = 10V, See Fig. 14a & 14b
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, VDS = 400V, ƒ = 1.0MHz
g V_GS = 0V,V_DS = 0V to 400V
(Energy Related)
Avalanche Characteristics
Symbol
E_AS
IAR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
920
46
54
Units
mJ
A
mJ
Thermal Resistance
Symbol
R_θJC
h ^Parameter
Junction-to-Case
Typ.
–––
Max.
0.23
Units
R_θCS
R_θJA
h Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
–––
°C/W
40
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
‚ Starting T_J = 25°C, L = 0.86mH, R_G = 25Ω,
I_AS = 46A. (See Figure 12).
ƒ I_SD ≤ 46A, di/dt ≤ 550A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff.(ER) is a fixed capacitance that stores the same energy
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† R_θ is measured at T_J approximately 90°C
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