IRFPS40N50LPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET®Power MOSFET

IRFPS40N50LPbF
1000000
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
100
Coss
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
40
35
30
25
20
15
10
5
0
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig 6. Typ. Output Capacitance
Stored Energy vs. V_DS
20 _{ID = 47A}
15
V_DS= 400V
V_DS= 250V
V_DS= 100V
10
5
0
0
100
200
300
400
Q_G , Total Gate Charge (nC)
Fig 7. Typical Gate Charge vs.
Gate-to-Source Voltage
4
1000
100
T_J = 150° C
10
T_J = 25°C
1
0.1
0.2
V _GS = 0 V
0.7
1.2
1.7
2.2
V_SD ,Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode
Forward Voltage
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