IRFP4668PBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFP4668PbF
6.0
ID = 1.0A
5.0
ID = 1.0mA
ID = 250μA
4.0
3.0
2.0
1.0
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
70
60
50
40
30
20
IF = 81A
VR = 100V
10
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
5000
70
60
50
40
30
20
IF = 52A
VR = 100V
10
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
5000
4000
3000
2000
1000
IF = 52A
VR = 100V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
4000
3000
2000
1000
0
IF = 81A
VR = 100V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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