IRFP4668PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD -97140
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFP4668PbF
HEXFET^® Power MOSFET
D _VDSS
200V
R_DS(on) typ. _8.0m:
max. 9.7m:
S ^ID
130A
D
S
D
G
TO-247AC
G
G ate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
Single Pulse Avalanche Energy d
Avalanche Current c
E_AR
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
R_θJC
R_θCS
R_θJA
www.irf.com
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient ij
Max.
130
92
520
520
3.5
± 30
57
-55 to + 175
300
10lbxin (1.1Nxm)
760
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
9/8/08