IRFP4668PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFP4668PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
140
120
100
80
60
40
20
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
14
12
10
8
6
4
2
0
0
40
80
120
160
200
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
100
10msec
10
1msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
DC
10
100
1000
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
250
Id = 5mA
240
230
220
210
200
190
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
2500
2000
1500
ID
TOP
18A
24A
BOTTOM 81A
1000
500
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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