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IRFP4668PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFP4668PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ÎV(BR)DSS/ÎTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
200 âââ âââ V VGS = 0V, ID = 250μA
âââ 0.21 âââ V/°C Reference to 25°C, ID = 5mAc
âââ 8.0 9.7 mΩ VGS = 10V, ID = 81A f
3.0 âââ 5.0 V VDS = VGS, ID = 250μA
âââ âââ 20 μA VDS = 200V, VGS = 0V
âââ âââ 250
VDS = 200V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ 1.0 âââ Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150 âââ âââ
Qg
Total Gate Charge
âââ 161 241
Qgs
Gate-to-Source Charge
âââ 54 âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ 52 âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ 109 âââ
td(on)
Turn-On Delay Time
âââ 41 âââ
tr
Rise Time
âââ 105 âââ
td(off)
Turn-Off Delay Time
âââ 64 âââ
tf
Fall Time
âââ 74 âââ
Ciss
Input Capacitance
âââ 10720 âââ
Coss
Output Capacitance
âââ 810 âââ
Crss
Reverse Transfer Capacitance
âââ 160 âââ
Coss eff. (ER) Effective Output Capacitance (Energy Related)h âââ 630 âââ
Coss eff. (TR) Effective Output Capacitance (Time Related)g âââ 790 âââ
S VDS = 50V, ID = 81A
nC ID = 81A
VDS = 100V
VGS = 10V f
ID = 81A, VDS =0V, VGS = 10V
ns VDD = 130V
ID = 81A
RG = 2.7Ω
VGS = 10V f
VGS = 0V
VDS = 50V
pF Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V h
VGS = 0V, VDS = 0V to 160V g
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 130 A MOSFET symbol
D
showing the
âââ âââ 520
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 81A, VGS = 0V f
âââ 130 âââ ns TJ = 25°C
VR = 100V,
âââ 155 âââ
TJ = 125°C
IF = 81A
âââ 633 âââ nC TJ = 25°C
di/dt = 100A/μs f
âââ 944 âââ
TJ = 125°C
âââ 8.7 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.23mH
RG = 25Ω, IAS = 81A, VGS =10V. Part not recommended for
use above this value.
 ISD ⤠81A, di/dt ⤠520A/μs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400μs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C.
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