IRFB4620PBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4620PbF
6.0
5.5
5.0
4.5
4.0
3.5
ID = 100µA
3.0
ID = 250uA
2.5
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
90
80 ^{IF = 10A}
VR = 100V
70 TJ = 25°C
60 ^{TJ = 125°C}
50
40
30
20
10
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
90
80 ^{IF = 15A}
VR = 100V
70 TJ = 25°C
60 ^{TJ = 125°C}
50
40
30
20
10
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
2000
1800
1600
1400
IF = 10A
VR = 100V
TJ = 25°C
TJ = 125°C
1200
1000
800
600
400
200
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
2000
1800
1600
1400
IF = 15A
VR = 100V
TJ = 25°C
TJ = 125°C
1200
1000
800
600
400
200
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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