IRFB4620PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD -96172
IRFB4620PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D _VDSS
200V
R_DS(on) typ.
60m:
max. 72.5m:
S ^ID
25A
TO-220AB
IRFB4620PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
c _IAR
Avalanche Current
f _EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat, Greased Surface
ij Junction-to-Ambient (PCB Mount)
www.irf.com
G
Gate
D
Drain
S
Source
Max.
25
18
100
144
0.96
± 20
54
-55 to + 175
300
x x 10lb in (1.1N m)
113
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
1.045
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
09/05/08