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IRFB4620PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFB4620PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Min.
200
âââ
âââ
3.0
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
RG(int)
Internal Gate Resistance
âââ
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
37
Qg
Total Gate Charge
âââ
Qgs
Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
hà Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ
g Coss eff. (TR) Effective Output Capacitance (Time Related)
âââ
Typ.
âââ
0.23
60
âââ
âââ
âââ
âââ
âââ
2.6
Typ.
âââ
25
8.2
7.9
17
13.4
22.4
25.4
14.8
1710
125
30
113
317
Max. Units
Conditions
âââ
 âââ
f 72.5
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 5mA
m⦠VGS = 10V, ID = 15A
5.0
20
250
100
-100
V VDS = VGS, ID = 100µA
µA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
âââ â¦
Max. Units
Conditions
âââ S VDS = 50V, ID = 15A
38
ID = 15A
f âââ
âââ
nC
VDS = 100V
VGS = 10V
âââ
ID = 15A, VDS =0V, VGS = 10V
âââ
VDD = 130V
âââ
âââ
âââ
ns
ID = 15A
f RG = 7.3â¦
VGS = 10V
âââ
VGS = 0V
âââ
VDS = 50V
âââ pF Æ = 1.0MHz (See Fig.5)
âââ
âââ
h VGS = 0V, VDS = 0V to 160V (See Fig.11)
g VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 25
MOSFET symbol
D
A showing the
integral reverse
G
âââ âââ 100
âââ âââ 1.3
f p-n junction diode.
V TJ = 25°C, IS = 15A, VGS = 0V
S
âââ
âââ
78
99
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
âââ
âââ
294
432
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
f IF = 15A
di/dt = 100A/µs
âââ 7.6 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 1.0mH
RG = 25â¦, IAS = 15A, VGS =10V. Part not recommended for use
above this value .
 ISD ⤠15A, di/dt ⤠634A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
2
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