IRFB4620PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4620PbF
100
TJ = 175°C
10
TJ = 25°C
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100 150 200
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
260
Id = 5mA
250
240
230
220
210
200
190
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
500
450
ID
TOP
2.05A
400
2.94A
350
BOTTOM 15A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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