IRF9910PBF_08 Datasheet, PDF (6/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL Low Gate Charge

IRF9910PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
12
14
10
12
10
8
8
6
6
4
4
2
2
0
25
50
75 100 125 150
TA , Ambient Temperature (°C)
Fig 19. Maximum Drain Current vs.
Ambient Temperature
2.5
0
25
50
75 100 125 150
TA , Ambient Temperature (°C)
Fig 20. Maximum Drain Current vs.
Ambient Temperature
2.5
2.0
ID = 250µA
1.5
2.0
ID = 250µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 21. Threshold Voltage vs. Temperature
140
ID
120
TOP
2.2A
2.6A
BOTTOM
8.3A
100
80
60
40
20
0
25
50
75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 23. Maximum Avalanche Energy
vs. Drain Current
6
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 22. Threshold Voltage vs. Temperature
120
100
TOP
BOTTOM
ID
5.5A
6.2A
9.8A
80
60
40
20
0
25
50
75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 24. Maximum Avalanche Energy
vs. Drain Current
www.irf.com