IRF9910PBF_08 Datasheet, PDF (3/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL Low Gate Charge

Typical Characteristics
IRF9910PbF
10000
1000
100
Q1 - Control FET
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
10000
1000
100
Q2 - Synchronous FET
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
10
1
0.1
0.01
0.1
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
0.1
0.01
0.1
2.5V
≤60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10000
1000
100
TOP
BOTTOM
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
10000
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10
1
0.1
0.1
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
10
1
0.1
0.1
2.5V
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100
100
TJ = 150°C
10
10
TJ = 25°C
1
TJ = 25°C
0.1
VDS = 10V
≤60µs PULSE WIDTH
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
www.irf.com
1
TJ = 150°C
0.1
VDS = 10V
≤60µs PULSE WIDTH
1
2
3
4
5
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
3