IRF9910PBF_08 Datasheet, PDF (4/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL Low Gate Charge

IRF9910PbF
Typical Characteristics
Q1 - Control FET
Q2 - Synchronous FET
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance Vs.Drain-to-Source Voltage
1000
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.Drain-to-Source Voltage
6.0
ID= 8.3A
5.0
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0 1 2 3 4 5 6 7 8 9 10
QG Total Gate Charge (nC)
Fig. 9. Gate-to-Source Voltage vs Typical Gate Charge
6.0
ID= 9.8A
5.0
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
5
10 15 20
QG Total Gate Charge (nC)
Fig. 10. Gate-to-Source Voltage vs Typical Gate Charge
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µsec
1
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0
1
1msec
10msec
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
4
10
100µsec
1
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0
1
1msec
10msec
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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