IRF9910PBF_08 Datasheet, PDF (5/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL Low Gate Charge

Q1 - Control FET
1.5
ID = 10A
VGS = 10V
Typical Characteristics
IRF9910PbF
Q2 - Synchronous FET
1.5
ID = 12A
VGS = 10V
1.0
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
40
35
ID = 10A
30
25
20
TJ = 125°C
15
10
TJ = 25°C
5
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs. Gate Voltage
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0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
25
ID = 12A
20
15
TJ = 125°C
10
5
TJ = 25°C
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs. Gate Voltage
5