IRF8313PBF Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF8313PbF
38
ID = 9.8A
34
30
26
22
18
14
10
2.0
TJ = 125°C
TJ = 25°C
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_{- VDD}
Fig 15a. Switching Time Test Circuit
6
200
ID
TOP
3.0A
160
5.0A
BOTTOM 8.0A
120
80
40
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V_(BR)DSS
tp
I_AS
Fig 14b. Unclamped Inductive Waveforms
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 15b. Switching Time Waveforms
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