IRF8313PBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

100
10
1
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
0.1
0.01
0.1
≤60μs PULSE WIDTH
Tj = 25°C
2.3V
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF8313PbF
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
2.3V
0.1
0.1
≤60μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
TJ = 175°C
1
TJ = 25°C
0.1
0.01
1
VDS = 15V
≤60μs PULSE WIDTH
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 9.8A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3