IRF8313PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97145
IRF8313PbF
Applications
l Load Switch
l DC/DC Conversion
Benefits
l Low Gate Charge and Low R_DS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l 100% Tested for R_G
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
Description
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
Qg
30V 15.5m:@V_GS = 10V 6.0nC
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1
SO-8
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Max.
30
±20
9.7
8.1
81
2.0
1.3
0.016
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R_θJL
R_θJA
g Junction-to-Drain Lead
fg Junction-to-Ambient
Notes  through … are on page 9
Typ.
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ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
Max.
42
62.5
Units
°C/W
1
11/5/08