IRF8313PBF Datasheet, PDF (5/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF8313PbF
10
2.5
8
2.0
ID = 250μA
6
ID = 25μA
1.5
4
1.0
2
0
25
50
75
100 125 150 175
TA, Ambient Temperature (°C)
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τι (sec)
0.1396039 0.000010
0.4048955 0.000030
R1
R2
R3
R4 R5 R6
R7
R8
0.5273926 0.000020
τJ
R1
R2
R3
R4 R5 R6
R7
R8
1.2084906 0.001289
τJ
τa 1.5779475 0.000340
τ1
τ1
τ2
τ2
τ3
τ3
τ4
τ4
τ5
τ5
τ6
τ6
τ7
τ7
τ8
τ8
7.0394610 0.009747
18.0102679 27.798341
Ci= τi/Ri
Ci i/Ri
33.5929564 0.575346
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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