IRF7907PBF_08 Datasheet, PDF (6/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL

IRF7907PbF
Q1 - Control FET
10
Typical Characteristics
12
Q2 - Synchronous FET
10
8
8
6
6
4
4
2
2
0
25
50
75
100
125
150
TJ, Ambient Temperature (°C)
Fig 19. Maximum Drain Current vs. Ambient Temp.
2.2
2.0
1.8
ID = 250µA
1.6
1.4
1.2
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 21. Threshold Voltage vs. Temperature
50
ID
TOP 3.0A
40
3.5A
BOTTOM 7.0A
30
20
10
0
25
50
75
100
125
150
TJ, Ambient Temperature (°C)
Fig 20. Maximum Drain Current vs. Ambient Temp.
2.2
2.0
1.8
ID = 250µA
1.6
1.4
1.2
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 22. Threshold Voltage vs. Temperature
60
ID
50
TOP 3.8A
4.4A
BOTTOM 8.8A
40
30
20
10
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 24. Maximum Avalanche Energy vs. Drain Current
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