IRF7907PBF_08 Datasheet, PDF (4/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL

IRF7907PbF
Typical Characteristics
10000
1000
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
10000
Coss
100
Crss
1000
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
100
10
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
12
ID= 7.0A
10
8
VDS= 24V
VDS= 15V
VDS= 6.0V
12
ID= 8.8A
10
8
VDS= 24V
VDS= 15V
VDS= 6.0V
6
6
4
4
2
2
0
0
4
8
12
16
QG Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
1msec _100µsec
0
0
5 10 15 20 25 30
QG Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
1
10msec
0.1 TA = 25°C
Tj = 150°C
Single Pulse
100msec
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
4
1
10msec
0.1 TA = 25°C
Tj = 150°C
Single Pulse
100msec
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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