IRF7907PBF_08 Datasheet, PDF (1/10 Pages) International Rectifier – Dual SO-8 MOSFET for POL

PD - 97066A
IRF7907PbF
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
: 30V Q1 16.4m @V_GS = 10V
: Q2 11.8m @V_GS = 10V
I_D
9.1A
11A
Benefits
l Very Low R_DS(on) at 4.5V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for R_G
l Lead-Free
SO-8
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_θJL
g ^Parameter
Junction-to-Drain Lead
R_θJA
fg Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
9.1
11
7.3
8.8
76
85
2.0
2.0
1.3
1.3
0.016
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
42
62.5
Q2 Max.
42
62.5
Units
°C/W
www.irf.com
1
07/09/08